Synthesis and Optical Properties of Zinc Oxide Nanoparticles grown on Sn-coated Silicon Substrate by Thermal Evaporation Method
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Properties of Zinc Oxide Presentation Transcript:
1.Synthesis and Optical Properties of Zinc Oxide Nanoparticles grown on Sn-coated Silicon Substrate by Thermal Evaporation Method
2.Outline
Introduction
ZnO Vs. GaN
Experimental details
Results and discussion
Surface morphology
Crystalline structure
Optical properties
Photoluminescence spectrum
Raman spectrum
Conclusion
Future work
Applications
3.Introduction
Semiconductor nanostructures are ideal system for exploring a large number of novel phenomena at the nanoscale
Nanostructure represents a system or object with at least one dimension in the order of one-hundred nanometer or less
Among all the semiconductors, Zinc oxide (ZnO) is a unique material that exhibits semiconducting, piezoelectric, and pyroelectric multiple properties
Using different processing techniques, various nanostructures of ZnO such as Nanowires, Nanorods, Nanocombs, Nanorings, Nanobows, Nanoparticles, Nanobelts, and Nanocages have been synthesized under specific growth conditions
These unique nanostructures unambiguously demonstrate that ZnO is probably the richest family of nanostructures among all known materials, both in structures and properties
4.Different types of ZnO Nanostructure
5. ZnO vs. GaN
6.Experimental Details
7.Experimental
8.Initially, n-Si substrate have been cleaned by using standard cleaning procedure.
Cleaned Si substrate immediately put in the vacuum coating unit (model 12A4D of HINDVAC, India) for deposition of thin film of Sn metal (thickness = 50 nm ) which is working as seed layer on the substrate surface
The seed layer of Sn metal provides excellent nucleation sites for growth of ZnO nanostructures on n-Si substrate
Finally, ZnO film of thickness ~ 300 nm deposited on Sn coated Si substrate by thermal evaporation method
To improve crystallinity of ZnO thin film, annealing treatment is performed in N2 gas atmosphere at 550 °C for duration of 30 minutes respectively.
Another film of ZnO on bare n-Si substrate also deposited to analyze the effect of seed layer on morphology of ZnO thin film
Further, samples cool down to room temperature for further characterization purpose
9.Schematic representation
10.Results and Discussions
Download
Properties of Zinc Oxide Presentation Transcript:
1.Synthesis and Optical Properties of Zinc Oxide Nanoparticles grown on Sn-coated Silicon Substrate by Thermal Evaporation Method
2.Outline
Introduction
ZnO Vs. GaN
Experimental details
Results and discussion
Surface morphology
Crystalline structure
Optical properties
Photoluminescence spectrum
Raman spectrum
Conclusion
Future work
Applications
3.Introduction
Semiconductor nanostructures are ideal system for exploring a large number of novel phenomena at the nanoscale
Nanostructure represents a system or object with at least one dimension in the order of one-hundred nanometer or less
Among all the semiconductors, Zinc oxide (ZnO) is a unique material that exhibits semiconducting, piezoelectric, and pyroelectric multiple properties
Using different processing techniques, various nanostructures of ZnO such as Nanowires, Nanorods, Nanocombs, Nanorings, Nanobows, Nanoparticles, Nanobelts, and Nanocages have been synthesized under specific growth conditions
These unique nanostructures unambiguously demonstrate that ZnO is probably the richest family of nanostructures among all known materials, both in structures and properties
4.Different types of ZnO Nanostructure
5. ZnO vs. GaN
6.Experimental Details
7.Experimental
8.Initially, n-Si substrate have been cleaned by using standard cleaning procedure.
Cleaned Si substrate immediately put in the vacuum coating unit (model 12A4D of HINDVAC, India) for deposition of thin film of Sn metal (thickness = 50 nm ) which is working as seed layer on the substrate surface
The seed layer of Sn metal provides excellent nucleation sites for growth of ZnO nanostructures on n-Si substrate
Finally, ZnO film of thickness ~ 300 nm deposited on Sn coated Si substrate by thermal evaporation method
To improve crystallinity of ZnO thin film, annealing treatment is performed in N2 gas atmosphere at 550 °C for duration of 30 minutes respectively.
Another film of ZnO on bare n-Si substrate also deposited to analyze the effect of seed layer on morphology of ZnO thin film
Further, samples cool down to room temperature for further characterization purpose
9.Schematic representation
10.Results and Discussions
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